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Posts Tagged ‘Joint’

Panasonic to sell remaining stake in semiconductor joint venture in face of ‘aggressive’ competition

03 Dec

Panasonic has announced it’ll be selling off its minority stake in its semiconductor joint venture for $ 250M to Taiwan’s Nuvoton Technology Corp after deciding it would need to invest more than it is prepared to do to compete and expand in the market.

Back in 2014, Panasonic offloaded a majority of its semiconductor unit to a joint venture with Isreali semiconductor manufacturer TowerJazz. The joint venture, which is owned 51% by TowerJazz and 49% by Panasonic, was initially believed to be sold as a whole, but TowerJazz has since confirmed in a statement that it will retain its majority stake and ultimate control of the operation following the transition:

‘TowerJazz, the global specialty foundry leader, clarifies following recent press releases in connection with the sale of Panasonic semiconductor business to Nuvoton that it will not sell its TPSCo shares and will maintain its 51% ownership and Board control in TPSCo.’

Part of the semiconductor business is involved with making imaging sensors for cameras and smartphones, as well as for numerous industrial purposes. It isn’t clear at the moment exactly how this will impact the company’s camera division or the upcoming 8K organic sensor planned for the 2020 Olympics, but all intellectual property and contracts are to be transferred to the buyer in June next year — a month before the start of the Olympics.

Panasonic says it’s tried to streamline its semiconductor business and that it has divested parts of the business already to make it less expensive to operate, but that it would need much more investment to expand the division and to compete in an aggressive market.

The sale may not have very much effect at all as the majority of Panasonic’s Lumix cameras use third-party sensors, and the majority of sensors made by the division being sold were for the automotive business and industrial applications. However, the division lists 16MP CMOS sensors for stills cameras and 20MP Super 35mm sensors for broadcast cameras in its offering. Whether the technology and manufacturing facilities for the 8K organic sensor are also part of the deal we have yet to discover.

We have contacted Panasonic for comment and to clarify what this might mean, if anything, for its camera business. We will update the article if we receive a statement.

Press release:

Announcement of the Transfer of the Semiconductor Business

OSAKA, Japan – Panasonic Corporation (hereinafter, the “Company”) announced that it will transfer (hereinafter, the “Transfer”) the semiconductor business mainly operated by Panasonic Semiconductor Solutions Co., Ltd. (hereinafter, “PSCS”), which is a 100% consolidated subsidiary company of Panasonic Equity Management Japan G.K.(hereinafter, “PEMJ”), a 100% consolidated subsidiary company of the Company, to Nuvoton Technology Corporation (hereinafter, “Nuvoton”), a Taiwan-based semiconductor company under the umbrella of Winbond Electronics Corporation group, and enter into the Stock and Asset Transfer Agreement (hereinafter, the “Agreement”) with this company. A decision was authorized by the Board resolution today.

1. Background and Purpose
The semiconductor business of the Company has shifted from the AV area to the automotive and industrial area over the last few years. The Company has positioned the “Sensing” technologies such as image sensors, and the “LiB Application” technologies such as IC for battery management and MOSFET for LiB battery circuits protection as the focus areas, and the Company has aimed to grow its business by consolidating resources in these areas.

In the meantime, in April 2014, the Company transferred the semiconductor wafer production process of the Hokuriku Plants (Uozu, Tonami, Arai) to the joint venture company formed with Tower Semiconductor Ltd., an Israel based foundry company. Furthermore, in June 2014, the Company transferred its semiconductor assembly plants in Singapore, Indonesia and Malaysia to UTAC Manufacturing Services Ltd. (hereinafter, “UTAC”) having its headquarter in Hong Kong. The Company has been strengthening its competitiveness by becoming an asset-light company, consolidating and eliminating its offices and production bases in both Japan and overseas for the mitigation of business risks.

However, the competitive environment surrounding the semiconductor business has become extremely severe due to aggressive expansion of competitors, huge investments in the focused area, and industry reorganization through M&A. In such an environment, the Company has come to believe that the even stronger business operation and the continuous investment is critical in order to achieve a sustained growth and expansion of the semiconductor business. Accordingly, it has concluded that the best option would be to transfer the business to Nuvoton, which highly appreciates the Company’s accumulated technical and product capabilities and therefore has a potential to lead stable growth by leveraging those capabilities.

2. About the Transfer
(1) Business restructuring before the Transfer: Just prior to the Transfer, the Company will restructure the semiconductor business as follows.

  • All shares of Panasonic Industrial Devices Systems and Technology Co., Ltd. (hereinafter, “PIDST”) and Panasonic Industrial Devices Engineering Co., Ltd. (hereinafter, “PIDE”), which are wholly-owned subsidiaries of PEMJ, will be handed over to PSCS by way of company split.
  • The semiconductor business-related intellectual property rights and certain business contracts held by the Company and/or the Company’s subsidiaries and the semiconductor business-related assets and debt of the Company will be handed over to PSCS by way of either company split or asset transfer.
  • All PSCS’s shares held by PEMJ will be handed over to a to-be-established, wholly-owned subsidiary of PEMJ (hereinafter, the “PSCS Holding Company”) by way of share transfer.
  • The semiconductor-related components (lead frame) business of PSCS will be handed over to a to-be-established, wholly-owned subsidiary of PEMJ by way of company split.

(2) Details of the Transfer: Upon completion of the business restructuring above, the Transfer will be carried out as per the details below with target effective date of June 1, 2020 (scheduled).

  • PEMJ will transfer all PSCS Holding Company’s shares to Nuvoton.
  • The business of Panasonic Industrial Devices Semiconductor Asia (an in-house company in charge of development and sales of semiconductors; hereinafter, “PIDSCA”) under Panasonic Asia Pacific Pte Ltd. (a Singaporean entity owned by the Company through its subsidiary; hereinafter, “PA”) will be handed over to Singapore- based entity owned by Nuvoton.
  • Certain facilities and inventories attributable to the semiconductor business of Panasonic Semiconductor (Suzhou) Co., Ltd. (hereinafter, “PSCSZ”) will be transferred to China-based entity owned by Nuvoton.

3. Other
The Agreement is based on the precondition of obtaining approvals from the authorities responsible for competition laws and other government agencies of the respective country and region. In addition, the planned date of the Transfer including business restructuring before the Transfer may differ significantly in light of the duration required for completing the procedures for obtaining approval and other procedures concerning permissions etc.

Articles: Digital Photography Review (dpreview.com)

 
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Leica and Huawei to create joint R&D center

24 Sep

Leica’s Dr. Andreas Kaufmann with Ren Zhengfei, founder of HUAWEI

Camera manufacturer Leica and telecom brand Huawei have announced they are to create a research and development center so they can jointly work on optical and software systems. The Max Berek Innovation Lab will be established at Leica’s headquarters in Wetzlar, Germany, and will build on the relationship the two companies formed while producing the Huawei P9 and P9 Plus smartphones. There was some doubt about the level of Leica’s involvement in the P9 project, but Huawei clarified the extent of the German brand’s contribution in a statement in April.

This next step of the partnership intends to push forward lens and software technology, according to Leica, with the aim of improving the image quality it’s possible to obtain from the tiny cameras that phones and other mobile devices use. The pair also state that they will work together on solutions for virtual reality, augmented reality and computer-based imaging, and that they will involve universities and other research establishments in their projects.

The new research lab is named after optical engineer Max Berek, the man who developed the first lens for the Leica 35mm camera system. He joined Leitz the year after Oskar Barnack came to the company from Zeiss, and designed the 50mm F3.5 lens that was coupled with the Leica 1. The lens was named Elmax – E rnst L eitz Max and the 50mm focal length became the standard for the 135 format. The Elmax developed into the Elmar, a lens that Leica still uses today.

For more information see the Leica and Huawei websites.

Press release

Leica Camera and HUAWEI Establish New R&D Centre

‘Max Berek Innovation Lab’ will conduct R&D in the fields of new optical systems, computational imaging, virtual reality and augmented reality

HUAWEI and Leica Camera AG today announced that they have expanded their strategic collaboration with the establishment of a jointly operated research and innovation centre, the Max Berek Innovation Lab. The launch comes seven months after the public announcement of their long-term technology partnership in the field of optical engineering, and five months after the launch of the globally successful, multi-award winning HUAWEI P9 and P9 Plus smartphones.

The new lab, located at Leica’s global HQ in Wetzlar, Germany, will drive further development of optical systems and software-based technologies to improve imaging quality in a wide range of photographic and mobile device applications. Additional outcomes will include the creation of computational imaging, augmented reality (AR) and virtual reality (VR) solutions. In addition to R&D resources from both companies, HUAWEI and Leica plan to collaborate with German and international universities and research institutions.

The Lab’s establishment is the result of the vision and support of Dr. Andreas Kaufmann, majority shareholder and chairman of the advisory board of Leica Camera AG, and Ren Zhengfei, founder of HUAWEI.

“With the founding of the Max Berek Innovation Lab, HUAWEI and Leica Camera AG are expanding the scope of their successful strategic relationship and are laying the foundation for close collaboration in research and development of ground-breaking technologies in the imaging segment,” emphasised Dr. Andreas Kaufmann.

“In the future, over 90 per cent of the data traffic will be images and videos,” said Ren Zhengfei, founder of HUAWEI. “The Max Berek Innovation Lab provides the capacity to establish an even closer partnership with Leica, leading to continuous improvements in image and video quality. As a result, we will deliver the most advanced innovations in the smartphone camera market and bring greater value to consumers.”

“HUAWEI and Leica share not only enormous innovation power and years of research experience, but also their dedication to providing the highest quality standards. The Max Berek Innovation Lab offers us a historic opportunity to unite the resources and extensive expertise of both companies to pioneer game-changing technologies,” confirmed Markus Limberger, Chief Operating Officer (COO) of Leica Camera AG and director of the Max Berek Innovation Lab.

The R&D centre is named in memory of Max Berek (1886 – 1949), the German pioneer of microscopy and creator of the first Leica lenses. Berek was also responsible for the optical design of more than 20 lenses for the legendary 35mm camera, invented and built by Oskar Barnack. Thanks to the exceptional imaging performance and perfect harmonisation of the lenses, coupled with Barnack’s ingenious construction, Leica achieved worldwide success in 35mm photography.

Articles: Digital Photography Review (dpreview.com)

 
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Panasonic and Fujifilm reveal joint sensor development, offering global shutter

05 Feb
Cross-sectional image of conventional Back Side Illumination (BSI) CMOS sensor compared to Panasonic’s Organic Photoconductive Film (OPF) sensor. (Image courtesy of Panasonic.)

Panasonic has announced that it has developed a new sensor using Organic Photoconductive Film (OPF), developed by Fujifilm, that is capable of recording a much wider range of tones (up to 3 EV greater dynamic range) than current silicon-based sensors, and in which each pixel is read out simultaneously to effect a true global shutter.

We first heard about this collaboration back in 2013, and it appears that the companies have made progress during that time. Similar to InVisage Quantum Film technology, the OPF sensor employs a thin, light-sensitive film on top of CMOS silicon circuitry. Panasonic says that the separation of the light conversion medium and electronic charge storage removes some design trade-offs that need to be made with conventional CMOS designs. The design allows for a larger active pixel area that makes it 1.2x more sensitive to light than normal photodiodes. Decoupling the photoconversion and storage areas also allows for the ability to store more total charge (higher full well capacity), resulting in 10x, or 3 EV, greater dynamic range. 

Additionally, the OPF layer is only 0.5 microns thick, or four to six times thinner than silicon photodiodes that are typically 2-3 microns in depth. According to Panasonic this expands the incident angle of light that can be collected to 60 degrees, compared to 30-40 degrees for conventional silicon sensors, which should allow greater flexibility in lens design. It should also help reduce false color and vignetting.

In addition to better sensitivity and dynamic range, the new technology brings other benefits as well. In particular, the OPF-based sensor will provide global shutter, by allowing all pixels to be exposed essentially at the same time by turning on and off the entire photosensitive area at once. The net effect is that all the lines of the sensor are essentially exposed simultaneously, as opposed to line-by-line as is the case with traditional ‘rolling’ electronic shutters. This helps avoid the dreaded ‘jello effect’ often seen in video, or the distortion of fast moving objects. It also helps avoid flickering and banding with artificial light sources, which with a ‘rolling’ shutter otherwise result in different rows on the sensor being exposed while the pulsating light source is on vs. off.

When combined with Panasonic’s historical strength in video-oriented products this will likely get the attention of the videography crowd. The potential benefits don’t stop there though. Panasonic has also developed a method of recording sequences of images at slightly different exposure values, that it calls Variable Sensitivity Multiple Exposure Technology. The process can track the direction of motion in the scene by tracing the subject as it moves across the scene becoming gradually darker from one frame to the next. If the camera knows it applied less exposure to the second frame than to the first, it can determine in which direction the subject is moving and at what speed. This could be of great assistance to AF algorithms.

The company is not absolutely clear about what practical uses it will put this new sensor to, but says ‘We expect this technology to be used widely in motion capture applications and also extend to other applications that have been thought to be difficult to realize unless high saturation global shutter or variable sensitivity multiple exposure.’ Panasonic is also developing a system for using cameras that replace wing mirrors in cars, and this technology will probably see the light of day in that area first, but the lessons learned will be very useful for its regular camera business. 

Press release:

Panasonic develops 10times Higher Saturation & Highly Functional Global Shutter Technology by controlling of Organic-Photoconductive-Film on CMOS Image Sensor

Osaka, Japan – Panasonic Corporation today announced that it has developed a new highly functional global shutter[1] technology for CMOS image sensor using organic photoconductive film (OPF)*1. This technology enables to capture high speed moving object up to 10 times brighter*2 scene in global shutter mode. In OPF CMOS image sensor, charge-storage function and photoelectric-conversion function can be set independently. By utilizing the unique feature of OPF CMOS image sensor, this technology solves the degradation of saturation signal[2] in conventional image sensor with global shutter function. Motion direction can be detected from acquired object’s signal level in one picture by fine control of shutter sensitivity by changing applied voltage to OPF which is hardly realized by conventional CMOS image sensors.

The newly developed highly functional global shutter technology contributes to high speed image sensing of moving objects without image distortion which appears in conventional shutter operation under very bright scene. We expect this technology to be used widely in motion capture applications and also extend to other applications that have been thought to be difficult to realize unless high saturation global shutter or variable sensitivity multiple exposure.

The new technology has the following advantages.

1. Wide incident angle (60 degrees), high sensitivity, high saturation and highly-functional circuits due to a unique feature of OPF, in which an OPF for photoelectric-conversion and a readout circuits are independent.

2. High saturation signal up to 10 times larger*3 than conventional image sensors with global shutter function due to Photoelectric Conversion Controlled Global Shutter Technology.

This development is based on the following new technologies.

1. CMOS Image Sensor Design Technology, in that, an OPF photoelectric-conversion part and a circuit part can be designed independently.

2. Photoelectric Conversion Controlled Global Shutter Technology that is realized by controlling of organic photoconductive film sensitivity.

3. Variable Sensitivity Multiple Exposure Technology which can detect the motion and its direction by changing image capturing sensitivity in each frame.

Panasonic holds 60 Japanese patents and 41 overseas patents (including pending) related to this technology.

Panasonic will present part of the research at the international conference ISSCC (International Solid-State Circuit Conference) 2016 which is to be held in San Francisco, USA on January 31 to February 4.

Notes:

*1: We are using an organic photoconductive film (OPF) that FUJIFILM Corporation has developed.

*2: Saturation signal per pixel area, compared with conventional silicon based CMOS image sensor with global shutter function.

More on the Technology

1. The OPF CMOS Image Sensor Design Technology, in that, photoelectric-conversion part and a circuit part can be designed independently.

The conventional image sensor consists of a silicon photodiode for capturing light, metal interconnects and an on-chip micro-lens. And, both a photoelectric-conversion function and a signal charge-storage function are executed by a silicon photodiode. On the other hand, in an OPF CMOS image sensor, a photoelectric-conversion function is executed by an OPF, instead of a silicon photodiode, and a signal charge-storage function is executed by circuits beneath the OPF. Both functions are almost independent, so an OPF CMOS image sensor can achieve the following features.

Expansion of the incident light range to 60 degrees and reproduction of faithful color.

An OPF with high optical absorption coefficient[3], instead of a silicon photodiode, is adopted, the thickness of an OPF has been reduced to just 0.5 microns, four to six times thinner than silicon photodiodes. Since the conventional silicon photodiode needs at least 2 – 3 microns in depth, the range of incident angles was limited to around 30 – 40 degrees. An OPF, achieved with the OPF CMOS image sensor technology, has enabled the expansion of this range to 60 degrees, efficiently utilizing light entering at an angle for faithful color reproduction with no color mixing. It also gives greater flexibility in lens designs, facilitating the reduction of overall camera size.

Boost of sensor sensitivity by 1.2 times compared to conventional silicon image sensors to deliver clear images, particularly in dark conditions.

The transistors and metal interconnects in each pixel, fabricated using Panasonic’s semiconductor device technology, are coated with an OPF. The area of the light receiving section becomes limited in conventional image sensors because of the existence of metal interconnects and the need to form a light shield film to prevent light incidence into areas other than the photodiode in each pixel. However, an OPF CMOS image sensor technology coats the sensor with an OPF, which can harvest all the light received on the sensor. This unique structure and high quantum efficiency of OPF boosts sensor sensitivity by 1.2 times compared to conventional silicon image sensors to deliver clear images, particularly in dark conditions.

Cross-sectional image of conventional Back Side Illumination (BSI) CMOS image sensor and OPF CMOS image Sensor

Design of OPF and circuits completely independent and realization of high-performance (high-saturation)

In the architecture of an OPF CMOS image sensor, the OPF, that converts light into electric signals, and the circuits, that store electric signal charges and readout electric signals, are designed completely independently. Therefore, by selecting an OPF, photoelectric-conversion characteristics, wavelength, sensitivity, etc., can be set with flexibility.

Moreover, in conventional image sensors, it is necessary to place both a silicon photodiode and circuits (transistors and capacitors) on silicon substrate in each pixel, so an area of circuits is limited. On the other hand, in an OPF CMOS image sensor, it is not necessary to place a silicon photodiode, so high-performance circuits, such as high-speed or wide dynamic range[4], can be formed on a silicon substrate.

In particular, in an OPF CMOS image sensor, by providing a large capacitor for storing signal charge, a saturation value[2] of electric signal can be significantly increased from conventional image sensors.

2. Photoelectric Conversion Controlled Global Shutter Technology that is realized by controlling of organic photoconductive film sensitivity.

Conventional CMOS image sensors with global shutter function require storage located near photoconversion area which makes it difficult to simultaneously shrink the pixel size and enlarge the saturation signal. Developed “Photoelectric conversion controlled global shutter technology” realizes shutter function by controlling of photoelectric conversion efficiency by only modulating applied voltage to OPF, without additional in-pixel circuit and no degradation of saturation signal. And developed “high saturation pixel technology” by pixel gain switching operation can capture under extremely bright scene, up to 10 times or more saturation signal per unit square pixel than conventional CMOS image sensor with global shutter function. This technology will solve imaging problems caused by rolling shutter distortion, flash bands[5] and LED flickers[6] in very bright scene.

Comparison of Global shutter pixel structure

3. Variable Sensitivity Multiple Exposure Technology which can detect the motion and its direction by changing image capturing sensitivity in each frame.

Conventional multiple exposure cannot detect the direction of motion because the capture sensitivity is fixed. Panasonic have developed “variable sensitivity multiple exposure technology” by controlling the voltage applied to OPF with elapse of time, which is hardly realized in conventional silicon based image sensor. We can get several images of different exposure time and different exposure sensitivity in one picture that enables character recognition by choosing optimum exposure time, so direction of motion can be detected by acquired object’s signal level. This technology enables sensing of moving object detection and motion directions.

Technical Terms:

[1] Global shutter

Shutter operation which can capture the image at the same time in all pixels.

Ordinary CMOS image sensor operates in rolling shutter mode in which exposure and shutter operation is executed row by row.

[2] Saturation/Saturation signals

Maximum amount of electric signal that can be handled by image sensors. Receiving a signal greater than this value leads to highlight clipping.

[3] Optical absorption coefficient

A constant value that indicates how much light is absorbed into a material, when incident light enter to the material.

[4] Dynamic range

Range of brightness that can be captured. (the ratio between highest and lowest signal can be captured by image sensor)

[5] Flash band

stripe shaped contrast appears in captured image, because light flashes during image sensor capture the image row by row pixel (rolling shutter operation).

[6] LED flicker

Imaging phenomenon resulting in incomplete image capture, caused by a LED’s (traffic, headlights, signs, etc.) frequency and a camera’s imaging speed.

Captured images of rotating propeller by different shutter mode

Multiple exposure images by Variable exposure time and sensitivity

Articles: Digital Photography Review (dpreview.com)

 
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How to roll the perfect joint HD

04 Nov

Ever wonder how to roll the perfect joint? Learn by watching this dutch rolling hash lover explain. Easiest tutorial ever! HD 🙂 Don’t miss the surprise ending!
Video Rating: 4 / 5

 
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Poser Joint Parameters part 1 of 2

23 Aug

Tutorial explaining Poser joint parameters. By PhilC www.philc.net

TRANCE GOA

 
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